| 摘要 |
PURPOSE: To utilize a lower surface, as well as an upper surface and a side surface of a storage electrode layer, as an effective area of a capacitor by allowing as far as the lower surface of the storage electrode layer of capacitor to be surrounded with a plate electrode layer. CONSTITUTION: After an NMOS transistor is formed on the surface of a P-type well 2, an inter-layer insulating film 10, for example an HTO film, and a polycrystalline silicon layer 30 which is N<+> -doped to act as the first conductor layer are deposited. Then covered with a resist 31, a vertical etching with normal photographic etching process, with a contact hole mask applied, and a horizontal etching with wet-etching method are performed. Then, after the resist 31 has been removed, the first insulating film 32 of thin film and a polycrystalline silicon layer 33 of second conductor layer are deposited. Here, the first insulating film 43 is about 60Å-80Å in thickness, and the polycrystalline silicon 33 is, for example, about 300Å-500Å in thickness. Lastly, the second insulating film 36 and a polycrystalline silicon layer 37 of third conductor layer are deposited, thus capacitor for a super-integrated semiconductor memory device is obtained. |
