| 摘要 |
<p>PURPOSE:To form the film of a resistor that is superior in film formation and electric characteristics at a low cost by applying a resistor film formation material which has a metal mercaptide compound that is selected out of ruthenium, iridium, and rhodium and a metal organic compound that is selected out of silicon, bismuth, and lead as main ingredients of the resistor film formation material to a substrate and then, burning the substrate thereof. CONSTITUTION:Respective metal organic substances are mixed so that atomic numbers obtained after burning of them may have ratios of: Ru:Si:Bi (or Pb)=1:0.5:0.5 and the above mixture in which viscosity is adjusted to 8000-20000cPs by using solvents of alpha-terpineol, butylcarbitolacetate, or the like is applied through printing to the surface of an insulating substrate 1 that is composed of a ceramic substrate mainframe 1a and of an underglaze layer 1b which is formed on the surface of the ceramic substrate by using a stainless screen. The insuating substrate 1 that is applied through printing is dried at a temperature of 120 deg.C and it is burnt at a temperature of 800 deg.C in an infrared belt type kiln to form a resistor film 2.</p> |
