| 摘要 |
PURPOSE:To protect a semiconductor memory device against soft error caused by the impingement of alpha particles by a method wherein a memory cell capacitor is formed above the source of a switching transistor provided above an island region, and signal charge is stored in a capacitor insulating film provided between a storage electrode and a cell plate electrode. CONSTITUTION:In a memory cell provided onto a semiconductor substrate, a source 7 of a switching transistor is formed above an island region 3, a storage electrode 8 is provided above the source 7, and a plate electrode 10 is built on the storage electrode 8 through the intermediary of a capacitor insulating film 9. A drain 4 of the switching transistor is provided under the island region 3 and electrically connected to a bit line provided to the base of a groove. By this setup, a cell can be formed high in density and resistance to soft error induced by the impingement of alpha particles. |
