| 摘要 |
PURPOSE:To increase an electrostatic capacity per unit occupied area by forming an electrode layer on a layer insulting film to form an opening at a position to be formed with a node contact hole, and forming a sidewall on an inner surface. CONSTITUTION:After an insulating film 2 is formed on a semiconductor substrate 1, a gate oxide film 3 is formed, a gate electrode 4 is formed, an impurity is lightly doped, a sidewall 5 is formed, and the impurity is doped to form source.drain regions 6, 7. Then, a layer insulating film 8 covering the surface is formed to form a polycrystalline silicon layer 9 thereon, etched to form an opening 11, an insulting layer 12 of a two-layer structure is then formed, a sidewall 13 is formed on the inner surface of the opening 11 by anisotropically etching, and the film 8 is etched to form a node contact hole 14 to expose the surface. Then, after a thin polycrystalline silicon layer 15 is formed, an impurity is doped in the layers 15, 9 to be conductive, removed by photoetching as a lower electrode. As a result, an electrostatic capacity per unit occupied area can be increased. |
