| 摘要 |
PURPOSE:To provide a tunnel FET which can operate at a high speed with a reverse conductive type impurity region to a semiconductor substrate, formed on a low density layer of the same conductive type as the substrate, formed on the substrate as a gate and with the substrate as a drain by forming a source electrode via a semi-insulating thin film on the substrate. CONSTITUTION:An N type epitaxial layer 15 is grown on an N<+> type semiconductor substrate 14, and an SiO2 film 15 having several tenAngstrom of thickness is formed on the surface of the layer. The semi-insulating film 16 for performing a tunnel may be a film made of nitrided silicon or a polycrystalline silicon. A source electrode 13 is formed on the film 16. A ring-shaped P<+> type impurity region 17 is formed by an ion injection method or the like to surround the electrode 13, and a gate electrode 11 is connected to the region 17. The substrate 14 is connected to the drain electrode 14, and a tunnel current between the source 13 and the drain 14 is controlled by the voltage applied to the gate 11. The conductive types of the respective semiconductor may be reversely to the above stage. |
