| 摘要 |
PURPOSE:To obtain a semiconductor device which forms many bonding pads on a semiconductor chip and which complies with a high integration by a method wherein bonding wires are stitch-bonded to the bonding pads and are ball-bonded to inner leads. CONSTITUTION:Tips of bonding wires 13 are heated to form balls; the balls are moved to the upper part of inner leads 14; and the bonding wires 13 are compression-bonded and ball-bonded to the inner leads. In succession, capillaries are moved to the upper part of bonding pads 12 corresponding to a semiconductor chip 11; they are stitch-bonded to the pads; and the bonding wires 13 are cut. Balls are again formed at the tips of the bonding wires 13; they are compression-bonded and ball-bonded to the inner leads; and the capillaries are moved to parts adjacent to the bonding pads 12 and are stitch-bonded. When these operations are repeated sequentially, the bonding pads 12 and the inner leads 14 which are corresponding can be connected to each other by using the bonding wires 13. |
