| 摘要 |
PURPOSE:To manufacture a vertical superlattice element by using an impurity doped layer by thermally selectively etching two undoped layers by using a difference in vapor pressures between materials. CONSTITUTION:A step of crystalline growing a vertical superlattice structure 13 using an atomic step on the surface of a compound semiconductor substrate 11 in which its main surface is inclined from a low index surface, a step, subsequent to the previous step, of once exposing the substrate 11 with the atmosphere and then thermally selectively etching one forming layer 13' a for forming the superlattice 13 by using a difference in vapor pressures between materials, and a step, subsequent thereto, of again growing a semiconductor layer are provided. As the two forming layers of the vertical superlattice, undoped two-dimensional compound semiconductor such as (AIAs)1/2(GaAs)1/2 can be included. Thus, the vertical superlattice including an impurity doped layer is obtained. |
