| 摘要 |
<p>PURPOSE:To irradiate the under part of foreign matter with ultraviolet rays even when there is foreign matter on an EPROM, in an IC memory card having an ultraviolet ray erasing type EPROM covered with a cap at least a part of which is composed of a substance pervious to ultraviolet rays built therein, by forming the ultraviolet transmitting part of the cap into a satin-like state. CONSTITUTION:The EPROM 1 mounted on a printed circuit board 2 by a wire bonding method is covered with a cap formed from a receiving frame 4 and a transmitting plate 3'. The transmitting plate 3' has a surface treated in a statin like state. The surface of the transmitting plate is treated in the stain-like state by a method applying station-like treatment to a mold or a method forming a flat surface and applying satin-like treatment thereto in a rear process by sand spraying processing. The ultraviolet rays applied to the EPROM pass through the transmitting plate 3' to be refracted on the surface of the transmitting plate 3' at this time but, since the surface thereof is in the satin-like state, ultraviolet rays are refracted in all directions to reach the active surface of the EPROM.</p> |
