发明名称 METHOD FOR MAKING SPOT DEFECT OF LIQUID CRYSTAL DISPLAY ELEMENT INTO BLOCK DEFECT AND LIQUID CRYSTAL DISPLAY ELEMENT
摘要 <p>PURPOSE:To improve a display grade and yield by connecting the picture element electrode of a defective picture element to a bus applied with he potential different from the potential of a common electrode by, for example, laser welding and forming the defective picture element into a black defect, thereby forming the picture element of a normally white mode into the black defect. CONSTITUTION:The picture element electrode 15 is cut off from the outside by laser cutting as shown by a line 33 from an extended part 32 if a gate bus 18 (gate electrode) of the part of a thin-film transistor TFT 16 is extended onto the picture element electrode 15 and the picture element becomes defective. The overlap parts of, for example, metallic layers 29, 31 for welding and metallic layer 28 for short circuiting are respectively irradiated with a laser 34 from the outside to melt these metallic layers and to destroy an insulating layer 22 so that the metallic layer 28 for short circuiting and the metallic layers 29, 31 for welding are respectively short circuited by molten metals 35, 36. Namely, these layers are welded by the laser. The defective picture element of the liquid crystal display element of the normally white mode is made into the black defect in this way. The display grade and yield are thus improved.</p>
申请公布号 JPH0421823(A) 申请公布日期 1992.01.24
申请号 JP19900126280 申请日期 1990.05.16
申请人 HOSIDEN CORP 发明人 UKAI YASUHIRO;SUNADA TOMIHISA;YUGAWA TEIZO
分类号 G02F1/1333;G02F1/133;G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368 主分类号 G02F1/1333
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