SI-DOPED GAAS SINGLE CRYSTAL SUBSTRATE,申请号KR20040083012-传众专利搜索

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发明名称	SI-DOPED GAAS SINGLE CRYSTAL SUBSTRATE
摘要
申请公布号	KR20060034363(A)	申请公布日期	2006.04.24
申请号	KR20040083012	申请日期	2004.10.18
申请人	HITACHI CABLE LTD.	发明人	WACHI MICHINORI;ITANI KENYA
分类号	H01L33/14	主分类号	H01L33/14
代理机构		代理人
主权项
地址

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