| 摘要 |
An insulated gate semiconductor device includes a first base layer of a first conduction type; a second base layer of a second conduction type formed on a first surface of the first base layer; a source layer of the first conduction type selectively formed in a surface region of the second base layer; a drain layer of the second conduction type formed on a second surface of the first base layer opposite from said first surface; and a gate electrode insulated from the source layer, the first base layer and the second base layer and forming in the second base layer a channel electrically connecting between the source layer and the first base layer, wherein the voltage transiently applied to the device is larger than the static breakdown voltage between the source and the drain when a rated current is turned off under a condition, in which condition the device is connected to an inductance load without using a protective circuit.
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