发明名称 ACTIVE MATRIX STRUCTURE
摘要 <p>PURPOSE:To prevent the degradation of display quality by considerably reducing the leak current due to light irradiation to a thin film transistor TR and considerably increasing the quantity of electric charge stored in a picture element capacity. CONSTITUTION:A liquid crystal display device is fated to be exposed to light and it is necessary to intercept the light in an element, but the leak current due to light irradiation to a thin film TR 2 is considerably reduced because light irradiation to the thin film TR 2 can be stopped by an incident light intercepting pattern 8. Since a signal holding capacity 9 is provided in parallel with a picture element capacity 6, the quantity of electric charge stored in the picture element capacity 6 is considerably increased, and therefore, the variation in potential difference of the picture element electrode 6 is held within an allowable range even at the time of the occurrence of self-discharging of the liquid crystal capacity 6 or increase of the leak current of the thin film TR 2 due to the rise of temperature or the like.</p>
申请公布号 JPH0420935(A) 申请公布日期 1992.01.24
申请号 JP19900124076 申请日期 1990.05.16
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;HOSIDEN CORP 发明人 WADA TSUTOMU;TSUNODA NOBUHIKO;KAWADA TADAMICHI;NAKAGAWA TAKANOBU;UKAI YASUHIRO;AOKI SHIGEO
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L29/786 主分类号 G02F1/136
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