摘要 |
Between the array conductive layers (14a, 18a) is a controlled distance. A conductive layer (14, 18) is fitted with a mask layer (20) on or over a substrate. The mask layer is etched to form a number of etched mask layer sections (20a, 20b) with a specified spacing. A second number of etched mask layer sections (24a-c) is formed, alternating the first number of sections with a second spacing. The second spacing is smaller than the first one. Then the conductive layer is etched, using the two mask layer sections, to form a series of conductive layer sections aligned within the second spacing, or fitted in the latter. USE/ADVANTAGE - For integrated semiconductor circuits, EEPROMs, etc., with improved, controlled spacing in an array.
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申请人 |
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
发明人 |
SHIROTA, RIICHIRO, KAWASAKI, JP;MOMODOMI, MASAKI;NAKAYAMA, RYOZO, YOKOHAMA, JP;ARITOME, SEIICHI, KAWASAKI, JP;KIRISAWA, RYOUHEI;ENDOH, TETSURO;WATANABE, SHIGEYOSHI, YOKOHAMA, JP |