发明名称 Mfg. conductive layer array - etches masking layer to form number of etched masking layer sections at preset intermediate spacing
摘要 Between the array conductive layers (14a, 18a) is a controlled distance. A conductive layer (14, 18) is fitted with a mask layer (20) on or over a substrate. The mask layer is etched to form a number of etched mask layer sections (20a, 20b) with a specified spacing. A second number of etched mask layer sections (24a-c) is formed, alternating the first number of sections with a second spacing. The second spacing is smaller than the first one. Then the conductive layer is etched, using the two mask layer sections, to form a series of conductive layer sections aligned within the second spacing, or fitted in the latter. USE/ADVANTAGE - For integrated semiconductor circuits, EEPROMs, etc., with improved, controlled spacing in an array.
申请公布号 DE4123158(A1) 申请公布日期 1992.01.23
申请号 DE19914123158 申请日期 1991.07.12
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 SHIROTA, RIICHIRO, KAWASAKI, JP;MOMODOMI, MASAKI;NAKAYAMA, RYOZO, YOKOHAMA, JP;ARITOME, SEIICHI, KAWASAKI, JP;KIRISAWA, RYOUHEI;ENDOH, TETSURO;WATANABE, SHIGEYOSHI, YOKOHAMA, JP
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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