SECONDARY ION MASS SPECTROMETRY

摘要

PURPOSE:To enable mass spectrometry of high resolution and accuracy by applying an ion beam to a columnar analysis area left after the required area of a sample is subjected to a sputter etching process. CONSTITUTION:The circumference of the analysis area of a sample is subjected to a sputter etching process and thereby a columnar analysis area is formed. When secondary ion mass spectrometry according to secondary ions from the sample is carried out by irradiation of the area with an ion beam, spatial element distribution in the depth of the analysis area can be detected with high resolution and accuracy from high to low density without reading peripheral information. Further the rate of the shift of secondary ions from their orbit due to electrification of a high resistance portion is reduced.