MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce the resistance of the semiconductor device by controlling the diffusion of ions of a buried layer using a diffusion barrier layer containing nitrogen ions. An epitaxial layer(2) is formed on a semiconductor substrate(1). First conductive type ions(3) are implanted into a first portion under the epitaxial layer. A diffusion barrier layer(4) is formed on the first conductive type ions by implanting nitrogen ions. Second conductive type ions(5) are implanted into a second portion on the diffusion barrier layer. A gate electrode is formed on the substrate. Third conductive type ions are implanted into a third portion adjacent to the gate electrode. An annealing process is performed on the resultant structure.