| 摘要 |
PURPOSE:To make corrosion resistance higher by producing transparent conductive film having a band gap of 3eV or more, in a compound semiconductor made from at least one element respectively selected out of the III group elements of the periodic table and the V group elements of the periodic table. CONSTITUTION:Transparent conductive film having a band gap of 3eV or more is produced in a compound semiconductor made from at least one element selected out of the III group element of the periodic table and at least one element selected out of the V group elements of the periodic table. As the III group elements of the periodic table, B, Al, Ga and In are available. And as the V group elements of the periodic table N, P and As are available. Compound semiconductor of GaN and the like, and mixed crystal of GaAlN, GaBN, GaInN, GaAlInN and the like are available as the examples of compound semiconductor made from these elements. And further some of these are doped with Mg, Zn, Cd, Be, Li, Na, SiO, F and the like to control resistivity. |
