| 摘要 |
PURPOSE:To obtain a superconductive optoelectronic device by a method wherein an electrode region is formed of Cu superconductive material, a photodetective region is formed of superconductive photoconduction material which contains Cu2O, and an interelectrode current is controlled depending on the amount of incident light. CONSTITUTION:A photoconductive gate region 2 of photoconductive Cu2O layer is formed on a substrate of SrTiO3 or MgO. A source region 3 and a drain region 4 both of Y1-Ba2-Cu3-O2 are formed on the sides of the region 2. Furthermore, an SiO2 layer 5 is formed on the regions 2, 3, and 4, and a Nesa glass layer 6 is formed thereon. A bias source VG is connected between an electrode on the glass layer 6 and the region 3, and a bias source VSD and an output resistor R are connected between the regions 3 and 4. When this element is cooled down to a temperature lower than a critical temperature 90K of the Y1-Ba2-Cu3-O2 material layer and irradiated with light whose wavelength is in a wavelength range of pumping light, carriers correspondent to the volume of incident light are generated in the region 2. The generated carriers are accelerated by the bias VSD between the source and the drain and turned into a current to enable an output voltage to be induced in the output resistor R.
|
