| 摘要 |
PURPOSE:To make it possible to control accurately the feed amounts of raw materials for crystal growth use to a substrate, on which a crystal growth is performed, as well as to obtain a good quality of crystal by a method wherein a zinc molecular beam and chalcogens hybrid gases are fed to the surface of the substrate. CONSTITUTION:A substrate 2 is installed on a substrate holder 1 of a growth system and after the interior of said growth system is evacuated to a vacuum degree of a pressure of 10<-8>Torr or thereabouts, the holder 1 is heated up to hold the substrate 2 for constant hours at 500 deg.C or thereabouts and the surface of the substrate 2 is cleaned. After that, H2Se gas and H2S gas, which are raw materials for zinc chalcogenide crystal growth use, and a metal zinc are respectively fed to the surface of the substrate 2 from a cell 3 for H2Se gas use, a cell 4 for H2S gas use and a cell 6 for metal zinc use as a molecular flow and as a molecular beam, whereby a growth of a zinc chalcogenide crystal is performed on the surface of the substrate 2. In this case, zinc filled in the cell 6 is evaporated by increasing the temperature of the cell 6 and is turned into the molecular beam. |
