| 摘要 |
PURPOSE:To perform easily a simplification of processes and a formation of a wide region for isolating semiconductor elements from others, by performing a lithographic process only once to form a resist pattern on a first insulation film, and by forming the region for isolating semiconductor elements from others through leaving second insulation films only on the sidewalls of grooves. CONSTITUTION:An oxide film 2 and a silicon nitride film 3 are deposited on the surface of a silicon substrate 1. Then, a resist pattern 4 is formed by an only once lithographic process. A working part 5A and an opening part 5B are specified. Then, after forming grooves 5A, 5B, the resist pattern 4 is removed, and a silicon oxide film 6 and a silicon nitride film 7 are deposited. A second insulation film is formed with both of them. Then, an anisotropic etching is performed, and the second insulation films are left only on the sidewalls of the grooves 5A, 5B. Then, the epitaxial growths of silicon crystals 8 are performed selectively only on the bottoms of the grooves 5A, 5B. Thereafter, by oxidizing only the surfaces of the silicon crystals 8 through a thermal oxidation method, silicon oxide films 9 are formed. Finally, the first insulation film is removed, and a series of the forming processes of the region for isolating semiconductor elements from others is completed. |
