发明名称 |
Charge coupled device for a solid state image pick-up device |
摘要 |
Signal charge conveying regions are made as oblong depletion regions which are formed in operation state along and at the vicinity of side walls of a trench or groove in a seimconductor imaging device, thereby improving resolution power, dynamic range, sensitivity and S/N characteristics are improved.
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申请公布号 |
US5083173(A) |
申请公布日期 |
1992.01.21 |
申请号 |
US19900628940 |
申请日期 |
1990.12.14 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA, TAKAHIRO;TERAKAWA, SUMIO |
分类号 |
H01L27/148;H04N5/335;H04N5/357;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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