发明名称 Charge coupled device for a solid state image pick-up device
摘要 Signal charge conveying regions are made as oblong depletion regions which are formed in operation state along and at the vicinity of side walls of a trench or groove in a seimconductor imaging device, thereby improving resolution power, dynamic range, sensitivity and S/N characteristics are improved.
申请公布号 US5083173(A) 申请公布日期 1992.01.21
申请号 US19900628940 申请日期 1990.12.14
申请人 MATSUSHITA ELECTRONICS CORPORATION;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMADA, TAKAHIRO;TERAKAWA, SUMIO
分类号 H01L27/148;H04N5/335;H04N5/357;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L27/148
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