| 摘要 |
<p>PURPOSE:To realize an electrically rewritable and inexpensive memory by providing plural electrically unrewritable memory cells on each address of a cell area of a nonvolatile memory and connecting a selection circuit selecting sequentially one memory cell among the plural memory cells to each address. CONSTITUTION:Two each memory cells (1a - 1h) are provided on each of addresses A1 - A4 of a nonvolatile memory, a selection line 2a is connected to memory cells 1a, 1c, 1e, 1g and a selection line 2b is connected to memory cells 1b, 1d, 1f, 1h and a connection circuit 4 is connected to the selection lines 2a, 2b via the selection cells 3a, 3b. When the connection circuit 4 selects one memory cell 1, data write and read of written data to and from the memory cell 1 are attained. Thus, the electrically rewritable and inexpensive memory is realized.</p> |
