| 摘要 |
A semiconductor fabrication plasma property controller (100) for controlling physical properties of a fabrication process plasma medium (144) under the influence of electromagnetic gas discharge energy from a power source (38) comprises a control volume (130) disposed between the process plasma (144) and the electromagnetic gas discharge energy source (38). A control gas (128) flowing within the control volume prohibits a predetermined portion of the emitted electromagnetic energy from influencing the fabrication process plasma (144). The flow rate and/or pressure of the control gas (128) within control volume 130 is used to adjust the fraction of electromagnetic energy absorbed within process plasma (144) and to prohibit influence of a controlled fraction of the plasma-generating electromagnetic energy on the process gas, plasma stream (144). The control volume (130) absorbs the excess electromagnetic energy emitted by the power source (38).
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