| 摘要 |
A treatment, typically plasma treatment apparatus comprises a plasma creating chamber adapted to create a plasma therein, a treating chamber in communication with the plasma creating chamber through an electrode for drawing electron beams from the plasma, an input conduit coupled to the treating chamber for introducing a reaction gas therein, and directive means associated with the input conduit for imparting directivity to the reaction gas. With the apparatus, plasma treatment, typically plasma CVD or plasma etching is carried out on an article in the chamber by forming a high density region of the reaction gas substantially perpendicular to the electron beams in the chamber.
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