| 摘要 |
PURPOSE:To increase an yield and to shorten the manufacturing time by a method wherein a resist pattern for a polymerized film is formed by the CVD method on a clean surface of a workpiece and a part of the polymerized film which is not covered with the resist pattern is selectively etched. CONSTITUTION:With a workpiece 1 placed in a vacuum vessel 2, inactive gas, hydrogen gas and other gasses are brought into the vessel 2 through a gas bring-in pipe 4 to operate plasma generators 5, 5' for removing an oxide film, an organic attachment, etc., from the surface of the thin film 1b. Nextly, the gas which is decomposed by a plasma into a polymerized film is brought into the vacuum vessel 2. On the thin film 1b, a polymerized film is made from the product made by plasma decomposition. The gas which generates a radical by light excitation is brought into the vacuum vessel 2. Then, light is cast on the polymerized film according to the desired pattern to decompose and remove the polymerized film. With a part of the polymerized film on which light is not cast selectively left over on the surface of the thin film 1b, a resist pattern is obtained. With the vacuum vessel 2 at the specified degree of vacuum, the compound gas for etching is brought in through a gas bring-in pipe 6 and is excited by microwaves of a magnetron 7 in a plasma tube 8, to be brought into the vacuum vessel 2. |
