| 摘要 |
PURPOSE:To attain high speed drive by detecting a high level of a sense amplifier and stopping the drive of the sense amplifier when the level exceeds a prescribed reference level. CONSTITUTION:When a sense amplifier drive signal SE is inverted to an H level, a PMOS transistor (TR) QS is conductive, sense operation is started, the reset voltage of a high level SAP bit line of a sense amplifier group 1 rises gradually, and when the high level voltage SAP goes to a threshold voltage Vth of the inverter G2, an output N2 of the inverter G2 is inverted to L and an output N1 of a NAND gate G1 goes to H, then the PMOS TR QS is cut off independently of the level of an HA sense amplifier drive signal SE. That is, the increase in the high level SAP is stopped by the cut-off of the PMOS TRQS and the high level SAP rises only a prescribed value hVcc. Thus, the circuit is driven at a fast speed. |
