| 摘要 |
PURPOSE:To prevent the capacity of a storage electrode from being restricted by the limit of resolution of a photolithography system, by forming the storage electrode of each memory cell so as to be divided into two stages on every other cell. CONSTITUTION:In order to form a first electrode, contact holes 26a between the electrode and a substrate are formed on every other memory cell by a lithography method. Poly silicon is formed on the whole surface, and the pattern of a first storage electrode 27a is formed by a lithorgraphy method, on the memory cell where the contact holes 26a between the electrode and the substrate are opened, i.e., on every other cell. After a silicon nitride film 28 is formed on the whole surface, a CVD SiO2 film 29 is formed as a second interlayer film. Second contact holes 26b between the storage electrode and the substrate are formed by lithography method, in memory cells except the memory cells where the first storage electrode 27a is formed. Poly silicon is formed on the whole surface, and the pattern of a second storage electrode 27b is formed by lithography method, on memory cells except the first storage electrode 27a. |
