FLATNING METHOD OF SEMICONDUCTOR

摘要

The planarising method comprises the steps of forming a first oxide film (1) onto a substrate (1); coating a polycrystal silicon layer (3) on the first oxide film (2); forming patterns on the poly-Si layer (3) by using a photo-masking process; applying an antioxidation insulating film (7) thereon; coating an oxide film (4) onto the insulating film (7), the oxide film being doped by impurities; heat-treating the oxide film at high temp. to planarise it. The insulating film prevents the Si substrate and poly-Si layer from oxidising to protect them when planarising of the oxide film with impurities.