| 摘要 |
PURPOSE:To improve the rectangularity of a resist pattern by diffusing a specific compound into an exposed resist, and performing subsequently a baking treatment and a development. CONSTITUTION:After on a Si substrate 301 a gate oxidized film 302, a polysilicon film 303 and an acid catalyst series negative type resist 304 are applied, they are irradiated with exicimer laser beams 305. Then after air is replaced with gaseous nitrogen in a vacuum chamber 307, ammonia, or an alkyl amine such as methylor ethylamine is diffused into the resist 304. Then subsequently by heat baking and developing, the improved pattern 309 excellent in rectangularity is obtained. Subsequently by anisotropically etching the film 303, a gate electrode 310 is formed. |
