INPUT CIRCUIT OF A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF INPUTTING DATA OF THE SAME

摘要

An input circuit of a non-volatile semiconductor memory device and a method of inputting data of the same are provided to buffer an input signal with small swing width safely, as trimming a reference voltage and/or a clock signal. A memory cell array comprises a plurality of memory transistors. An input circuit(1000) controls voltage level of an internal reference voltage and/or delay time of an internal clock signal in response to an MRS(Mode Register Set) trim code and/or an electrical fuse trim code, and generates a first buffered input signal. A column gate gates the buffered input signal in response to a decoded column address signal. A sense amplifier amplifies an output signal of the memory cell array and then provides the amplified output signal to the column gate, and receives an output signal of the column gate and then provides the received output signal to the memory cell array.