METHOD FOR FORMING BARRIER LAYER TO PREVENT CU DIFFUSION ON FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for forming a barrier layer for avoiding copper diffusion in fabricating a semiconductor device is provided to improve a copper diffusion preventing characteristic by using a Ta silicide layer as a copper diffusion barrier layer. A thermal via(304) for probing is formed on a copper interconnection. SiH4 is flowed to the inside of the thermal via to be adsorbed to the copper interconnection. An N2 plasma treatment is performed on the surface of the copper interconnection having adsorbed SiH4 to form an amorphous layer on the interface of the copper interconnection. TaN of 150 Å is deposited by a CVD process, and silicide(308) is formed on the interface of the copper interconnection by a heat treatment to complete a barrier layer.