CHEMICAL MECHANICAL POLISHING METHOD AND A METHOD OF FORMING ISOLATION LAYER COMPRISING THE POLISHING METHOD

摘要

A CMP method and a method for forming an isolation layer using the same are provided to prevent dishing of a polishing target layer by performing a first CMP using a first slurry including ionic surfactants having a second polarity different from a first polarity of a zeta potential and polishing particles. A mask layer(102) and a polishing target layer(104) having a zeta potential of a first polarity are formed on a substrate. A second slurry is supplied to the polishing target layer. The second slurry includes polishing particles and ionic surfactants of the first polarity or neutral surfactants. A second CMP is performed on the polishing target layer by using the second slurry. A first slurry is supplied to the polishing target layer. The first slurry includes polishing particles and ionic surfactants of a second polarity opposite to the first polarity. A first CMP is performed on the polishing target layer by using the first slurry.