| 摘要 |
PURPOSE:To attain a silylation at a room temp. and to prevent the deformation of a fine pattern by incorporating a tertiary amine group as a silylation catalyst, on a resist surface prior to a silylation treatment. CONSTITUTION:On a semiconductor substrate 13, a polyimide type resist 12 not to be silylated, and an novolac type resist 11 are successively applied, ex posed and developed to form the pattern 11 from the resist 11. Then after the tert. amine group (A) is sprayed to incorporate the amine group on the resist surface 11, by spraying the silylation reagent such as chlorotrimethylsilan, a silylated layer 15 is formed only on the pattern 11. Consequently after the layer 15 is masked, the resist 12 is etched to form the fine pattern 16. As the amine group A, triethylamine, 2,6-dimethlpyridine or N-ethylpiperidine is prefer ably used. |
