MANUFACTURING METHODS OF PNP TRANSISTOR

摘要

The method for manufacturing PNP transistor comprises (a) forming a open base by diffusing P type inpurity (14C) between the base (15) and the collector of PNP transistor, (6) forming an emitter by diffusing n+ inpurity (16) into the above P type inpurity, and (C) earthing the emitter onto the P type substrate. This newly invented method can improve positive current characteristics of input terminal on the circuit for designing very high input voltage circuit.