THIN FILM TRANSISTOR WITH DOUBLE PICTURE ELECTRODE AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

Thin film transistor is composed of glass substrate (1), semiconductor layer (7), ohmic layer (8), drain electrode (10), source electrode (9), and double gate electrode (3). Indium tin oxide and Cr are deposited on the glass substrate (1) by sputtering method to form capacitor (2) and double gate (3). SiOx film is deposited thereon to form the first gate insulation layer (4), and then transparent conductive film (ITO) is deposited to form several pixel electrode (5A,5B). Finally the second gate insulation layer (6) and semiconductor layer (7) are formed on the above first gate insulation layer (4).