| 摘要 |
The invention relates to a three-dimensional charge-coupled (CCD) image sensor including a silicon substrate (Si), an oxide layer (OL1), several gate electrodes (PG1), a thin layer of gate oxide (OL2), an epitaxial layer (P-EPi) of p type, several light-receiving areas (PD) of n type, several VCCD regions of n type, a charge transfer channel and a charge transfer barrier. <IMAGE>
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