| 摘要 |
<p>Gate width directions of transistors (12, 13, 14, 15, 31, 32, 33, 34, 41, 42, 43, 44) are taken in circumferential directions surrounding a certain point as a center. Or transistors (48, 50, 68, 70, 74, 76) are constructed by a plurality of straight lines l extending in radial directions of the certain point Q and intersecting each other at the same angle. Hereby, basic cells (10, 10P, 10N, 60, 62, 78, 80) can be assembled on a master slice symmetrically in plural directions. There are arranged in a mutual adjacent relation in which channel layers located under one opposing gate electrodes are formed into P channels (18, 23) and channel layers located under the other opposing gate electrodes are formed into N channels (16, 24). Otherwise, there are arranged alternately with respect to P channels (11P) and N channels (11N) in an adjacent relation basic cells in which all channel layers located under all gate electrodes in the same basic cell are formed by any type of the P channel and the N channel. <IMAGE></p> |
