| 摘要 |
A manufacturing method of a semiconductor device includes forming a metal mask on a substrate or on a layer provided on the substrate, and removing at least one of the substrate and the layer provided on the substrate selectively through a dry etching treatment with use of the metal mask. The metal mask has a first open pattern and a second open pattern. The first open pattern is opened at a given area of the metal pattern. The second open pattern is opened at an area dividing the metal mask.
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