发明名称 Composite comprising a silicon substrate and layered superconducting thin films.
摘要 <p>A composite comprising a silicon substrate (1) and a plurality of layers of a first oxide superconductor layer (3), a dielectric material layer (4), a second oxide superconductor layer (5), a second dielectric material layer (6) and a third oxide superconductor layer (7) deposited directly or through a buffer layer (2) in this order on the silicon substrate. The composite is used for fabricating superconducting devices such as Josephson element, SQUID and microwave devices. <IMAGE></p>
申请公布号 EP0466611(A1) 申请公布日期 1992.01.15
申请号 EP19910401967 申请日期 1991.07.15
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HARADA, KEIZO, CABINET BALLOT-SCHMIT;TANAKA, SABURO, CABINET BALLOT-SCHMIT;NAKANISHI, HIDENORI, CABINET BALLOT-SCHMIT;MATSUURA, TAKASHI, CABINET BALLOT-SCHMIT;HIGAKI, KENJIRO, CABINET BALLOT-SCHMIT;NAGAISHI, TATSUOKI, CABINET BALLOT-SCHMIT;HATTORI, HISAO, CABINET BALLOT-SCHMIT;ITOZAKI, HIDEO, CABINET BALLOT-SCHMIT
分类号 C30B29/22;H01B12/00;H01B13/00;H01L23/532;H01L39/02;H01L39/12;H01L39/22;H01L39/24 主分类号 C30B29/22
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