发明名称 |
MOS-type semiconductor device and manufacturing method thereof. |
摘要 |
A semiconductor device comprises source, channel and drain regions arranged generally vertically, and the channel and drain regions have special parts which are of the same conductivity type as the channel and drain regions respectively but highly doped, and these highly doped special parts adjoin each other. Such a device can control load current freely and smoothly while withstanding high drain voltages. <IMAGE> |
申请公布号 |
EP0466508(A1) |
申请公布日期 |
1992.01.15 |
申请号 |
EP19910306356 |
申请日期 |
1991.07.12 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
KAYAHARA, AKIHIRO 1-7 TOBUSHI-CHO;KAWASHIMA, ISAMU 479 OHOAZA KAWANAMI;TANIDA, HIROSHIY 18-24-105 URADOUHONNMACHI;YAMANISHI, YUYI 11-504 SHIMEIEN |
分类号 |
H01L21/336;H01L21/8249;H01L27/02;H01L27/04;H01L29/06;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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