发明名称 Tristate output gate structure particularly for CMOS integrated circuits.
摘要 <p>The tristate output gate structure particularly for CMOS integrated circuits comprises an enable terminal (30) receiving an enable signal and an input terminal (31) receiving an input signal, which connects, through signal switching means (38), an output terminal (32) to a positive power supply terminal or to a negative power supply terminal. The enable terminal can be electrically connected to the gate terminal of a first P-channel transistor (33) through signal inverting means (35,37) and to the gate terminal of a second N-channel transistor (34). The output terminal (32) is electrically connected to the drain terminals of the first and second transistors (33,34). The first and second transistors (33,34) electrically insulate the output terminal (32) from the input terminal (31). &lt;IMAGE&gt;</p>
申请公布号 EP0465873(A1) 申请公布日期 1992.01.15
申请号 EP19910109907 申请日期 1991.06.17
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 MOLONEY, DAVID;VAI, GIANFRANCO;ZUFFADA, MAURIZIO;BETTI, GIORGIO
分类号 H03K19/0175;H03K19/094;H03K19/0948 主分类号 H03K19/0175
代理机构 代理人
主权项
地址