| 摘要 |
PURPOSE:To improve the S/N ratio of a semiconductor photoelectric converter by arranging an electrode via an insulating layer on a low specific resistance semiconductor region set at the main surface side of a semiconductor substrate. CONSTITUTION:Sets of the first and second semiconductor regions 3, 4 and of the third and fourth semiconductor regions 5, 6 having low specific resistance are formed at the main surface 2 side of a semiconductor substrate 1. The first and second electrodes 11, 12 are respectively arranged via the first and second insulating layers 9, 10 on the surface of the main surface 2 side of the region between the first and the second semiconductor regions 3 and 4 and the region between the third and the fourth semiconductor regions 5 and 6 of the substrate 1. The first electrode 11 and the first layer 9 have light transmitting property, and first region 3 and the second electrode 12 are connected via a wiring layer 13 extending as an insulation of the substrate 1 between the region 3 and the electrode 12. |
