Compound semiconductor integrated circuit device.

摘要

A gate array comprises an array of a plurality of basic cells each including at least a normally-on type transistor (11, 12) and a plurality of normally-off type transistors (13 to 18). Source electrode (S), drain electrode (D) and gate electrode (G) of each normally-off type transistor (13 to 18) are not connected in common to electrodes of the other transistors (11 to 18) but are independent therefrom. Thus, a desired number of normally-off type transistors (13 to 18) can be connected to the normally-on type transistor (11; 12) by wiring, and the connection of an unnecessary normally-off type transistor to the normally-on type transistor (11; 12) can be avoided. <IMAGE>