| 摘要 |
<p>The present invention relates to a semiconductor device used as a gate electrode or interconnection, in which a polysilicon layer in a laminate comprising a polysilicon layer (102, 103) doped with an impurity and a refractory metal silicide layer (104) has an impurity concentration that is reduced close to a boundary between the polysilicon layer and the refractory metal silicide layer. With this structure, the difference in oxidation speed between the polysilicon layer and the silicide layer is smaller in comparison with a conventional structure, and thus peeling due to bird's beaks can be prevented. The semiconductor device of this structure can be realized by a two-layer polysilicon structure (102, 103) in which the upper layer in contact with the refractory metal silicide layer has a lower impurity concentration, or by a structure in which the peak of the impurity concentration profile is set to be deep within the polysilicon layer during ion implantation. <IMAGE></p> |
