发明名称 |
ETCHING SOLUTION COMPOSITION AND METHOD OF ETCHING USING THE ETCHING SOLUTION COMPOSITION |
摘要 |
An etching solution composition is provided to etch molybdenum/aluminum double-layered wiring used as gate wiring and an indium oxide layer used as a pixel electrode at once. An etching solution composition for etching a molybdenum/aluminum bilayer and an indium oxide layer includes (i) 1-10wt% of Fe(NO3)3, (ii) 0.1-2wt% of a fluorine-containing compound, (iii) 2-15wt% of HNO3, (iv) 0.5-5wt% of HCl, and (v) 68-96wt% of water. An etching method of an indium oxide layer includes the steps of: forming an indium oxide layer on a substrate; selectively leaving a photoreactive material on the indium oxide layer; and etching the indium oxide layer using the etching solution composition.
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申请公布号 |
KR20080045403(A) |
申请公布日期 |
2008.05.23 |
申请号 |
KR20060114488 |
申请日期 |
2006.11.20 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LEE, SUK;LIM, MIN KI;CHOI, YONG SUK;YOON, YOUNG JIN |
分类号 |
C09K13/08;C09K13/00;C09K13/04 |
主分类号 |
C09K13/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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