发明名称 |
PLANAR SEMICONDUCTOR DEVICE HAVING A FIELD PLATE ELECTRODE |
摘要 |
There is disclosed an NPN transistor comprising collector region of N conductivity type, base region of P conductivity type formed in the collector region, and emitter region of N conductivity type formed in the collector region. The collector and emitter regions define therebetween a planar PN junction. The NPN transistor further comprises a field plate electrode layer, when the transistor is viewed from above, extending from the periphery of the base region to the collector region. The field plate electrode layer comprises P conductivity semiconductor portion and N conductivity semiconductor portion. The P conductivity semiconductor portion is on the side of the base region. The N conductivity semiconductor portion is on the side of the collector region. |
申请公布号 |
EP0190423(B1) |
申请公布日期 |
1992.01.15 |
申请号 |
EP19850115145 |
申请日期 |
1985.11.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIRAI, KOJI C/O PATENT DIVISION;KAWAMURA, KEN C/O PATENT DIVISION |
分类号 |
H01L29/06;H01L29/40;H01L29/73;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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