| 摘要 |
PURPOSE:To prevent the reflection of light and to obtain good productivity by forming an antireflection layer consisting of a specific copolymer on one surface of a transparent thin film consisting of polyvinyl acetal. CONSTITUTION:The antireflection layer consisting of the copolymer of the perfluoroalkyl (meth)acrylate monomer expressed by formula I and the 3, 4- epoxy (meth)acryloyeoxytricyclo[5.2.1.0<2.6>] decane expressed by formula II is formed on at least one surface of the transparent thin film consisting of the polyvinyl acetal. In the formula I, R<1> denotes H or methyl group; R<2> denotes the group expressed by (CH2)m(CF2)nF, where m, n respectively denote m=1 to 2, n=3 to 14 integers. In the formula II, R<3> denotes H or methyl group. The antireflection layer maintains a low refractive index in this way and the exposing time in a semiconductor exposing and processing stage is shortened. The production efficiency is thus improved. |
