发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To prevent hold defect and to reduce a chip area and cost by refreshing a specified cell having an adverse hold characteristic more frequently than refreshing of the other cell. CONSTITUTION:When it is known in advance by an inspection process or the like that the hold characteristic of the specified memory cell in a cell array 10 is adverse, the address data is set into a row decoder controller 50. When selecting the array 10, the controller 50 passes address signals A2-A8, address signals AA2-AA8 are made equal to the signals A2-A8 and the specified word line of the array 10 is selected. On the other hand, when selecting cell arrays 11-13, the controller 50 supplies data set in advance to a decoder 60. Therefore, simultaneously with the word lines in the arrays 11-13, the designated word line in the array 10 is selected as well. Thus, the hold defect is prevented without especially providing any excess redundant circuits.
申请公布号 JPH0410297(A) 申请公布日期 1992.01.14
申请号 JP19900110982 申请日期 1990.04.26
申请人 NEC CORP 发明人 KOMURO TOSHIO
分类号 G11C11/403;G11C11/401;G11C11/406 主分类号 G11C11/403
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