发明名称 |
TRENCH FORMATION IN A SEMICONDUCTOR MATERIAL |
摘要 |
A semiconductor device is formed on a semiconductor layer. A gate dielectric layer is formed over the semiconductor layer. A layer of gate material is formed over the gate dielectric layer. The layer of gate material is patterned to form a gate structure. Using the gate structure as a mask, an implant into the semiconductor layer is performed. To form a first patterned gate structure and a trench in the semiconductor layer surrounding a first portion and a second portion of the semiconductor layer and the gate, an etch through the gate structure and the semiconductor layer is performed. The trench is filled with insulating material.
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申请公布号 |
US2008217705(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070683846 |
申请日期 |
2007.03.08 |
申请人 |
HALL MARK D;ABELN GLENN C;GRANT JOHN M |
发明人 |
HALL MARK D.;ABELN GLENN C.;GRANT JOHN M. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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