发明名称 PORTABLE SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To prevent the destruction of stored data or the degradation/ destruction of a storing means even when static electricity is discharged on a panel by electrically coupling a second ground line, which is branched from a first ground line, and a casing by a coupling means. CONSTITUTION:A semiconductor memory 21 is inserted to a terminal 29 by a connector 27 and in such a state, an electrode 16 of an electrostatic simulator is brought into contact with a panel 25 or 26 of the semiconductor memory device 21 so as to impress static electricity. Then, a discharging current 30 flows from the panel 26 through a coil spring 28, second ground line 23b and ground terminal 27a of the connector 27 to the terminal equipment 29. At such a time, since a ground line 23b of a printed circuit board 23 is branched from the first ground line 23a near the ground terminal 27a of the connector 27, the discharging current 30 does not flow into a semiconductor memory 22 or to an input/output terminal 27b of the connector 27 and a power supply terminal 27c but flows from the line 23b to the ground terminal 27a of the connector 27. Therefore, since the discharging current 30 passes through, there is no trouble such as degradating or destroying the semiconductor memory 22.</p>
申请公布号 JPH0410295(A) 申请公布日期 1992.01.14
申请号 JP19900108634 申请日期 1990.04.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMURA MASATOSHI
分类号 B42D15/10;G06K19/07;G11C5/00 主分类号 B42D15/10
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