| 摘要 |
PURPOSE:To obtain a semiconductor device which emits light in a blue color at high efficiency and with good visibility by using a specific semiconductor which is lattice-matched with a substrate. CONSTITUTION:A ZnCdSSe-based mixed-crystal semiconductor epitaxial layer 24 constituted of ZnS, ZnSe, CdS and CdSe which can be easily lattice-matched to a substrate is laminated on a III-V compound semiconductor single-crystal substrate 1. When an n-type ZnSdSse epitaxial layer 21 and a p-type ZnCdSSe epitaxial layer 23 are composed of, e.g. Zn0.4Cd0.6S and a ZnCdSSe lightemitting layer 22 is composed of Zn0.8Cd0.2S0.4Se0.6, the epitaxial layers are lattice-matched with the GaAs single-crystal substrate; the forbidden band width of the n-type ZnCdSSe epitaxial layer 21 and the p-type ZnCdSSe epitaxial layer 23 is at about 2.9eV and that of the ZnCdSSe light-emitting layer 22 is at about 2.6eV. When a voltage is applied across electrodes 31 and 32 in such a way that the electrode 31 on the substrate side is negative, carriers are injected into a light- emitting region with good efficiency, and light is emitted with high efficiency by the recombination of electrons with holes. |
